| abstract |
An embodiment includes a substrate, an active layer disposed on the substrate, the active layer being disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the first conductivity type semiconductor layer, A first electrode disposed on the first region of the first conductivity type semiconductor layer and a second electrode disposed on the second conductivity type semiconductor layer, 1 region is exposed from the light emitting structure and has a step difference from the upper surface of the second conductivity type semiconductor layer, and the light emitting structure is formed on the upper surface of the second conductivity type semiconductor layer and the first Wherein the step is 1 占 퐉 to 2 占 퐉, and the distance in the horizontal direction of the oblique side is 0.47 占 퐉 to 1.15 占 퐉. |