| abstract |
The method includes placing a first plurality of device dies on a first carrier, wherein the first plurality of devices and the first carrier combine to form a first composite wafer. The first composite wafer is bonded to a second wafer and the first plurality of device dies are bonded to a second plurality of device dies at a second wafer via hybrid bonding. The method also includes the steps of: debinking a first carrier from a first plurality of device dies, sealing a first plurality of device dies in a sealing material, and forming a first plurality of device dies and an interconnecting structure over the sealing material . |