| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam (eBeam) resist composition, and more particularly, to an (electron beam) resist composition for use in the production of an integrated circuit. Such resist compositions include scatter inhibiting compounds that minimize scattering and secondary electron generation, thereby enabling extremely high resolution lithography. Such high-resolution lithography can be used directly in a silicon-based substrate for manufacturing an integrated circuit, or alternatively, may be used to produce a lithography mask (e.g., a photomask) that facilitates high resolution lithography. |