| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_25305611f3c26078753e3bdc7b49366c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13069 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2015-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45479060d8a89fe86f04812f01753c50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4ba88f504d06db1f73a0dfb472d5fa0 |
| publicationDate |
2017-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170033746-A |
| titleOfInvention |
Thin film transistor, and the method of fabricating the same |
| abstract |
Provided is a thin film transistor. The thin film transistor comprises an oxide semiconductor channel layer consisting of a source electrode, a drain electrode, a non-crystal area, and a crystal area. The crystal area can be selectively formed in an area where the channel layer, the source electrode, and the drain electrode are directly touched. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200076009-A |
| priorityDate |
2015-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |