| abstract |
A method of forming a silicon nitride film at low temperature using an atomic layer deposition method and an atomic layer deposition apparatus therefor are disclosed. In the thin film formation method of the silicon nitride film, a silicon precursor of silicon-containing silicon is used as the source gas, and N2 gas or Ar gas activated by plasma is used as the reaction gas, and N2 gas The purge gas, the purge gas, the reactive gas, and the purge gas may be sequentially provided in this order to form a silicon nitride film (Si 3 N 4 ). |