| abstract |
An object of the present invention is to provide a polishing composition excellent in performance of eliminating ridges around the periphery of a hard laser mark, which provides a polishing composition for a silicon wafer. The composition for abrasive includes silica particles having a BET average particle diameter of 50 nm or less, a weak acid salt, and a quaternary ammonium compound. The content Y [mol / L] of the quaternary ammonium compound satisfies the following formula (1). (Wherein, Y 0 to [mol / L] is based on the adsorption amount B [mol / L] for theories buffered non-A, silica particles of the content of the weak acid salts X [mol / L], and a quaternary ammonium compound, Lt; RTI ID = 0.0 > Y < / RTI > = AX + B; |