| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-05432
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C4-134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C4-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48 |
| filingDate |
2015-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89433e09d3ed07165f113fd46fb415b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f094cc9b8191e358d30e992b465b84c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb223d37c19c04216902f61f88f397f9 |
| publicationDate |
2017-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170005123-A |
| titleOfInvention |
Mgo-based ceramic film, member for semiconductor production apparatus, and method for producing mgo-based ceramic film |
| abstract |
In the MgO-based ceramics film of the present invention, Al is dissolved in MgO, the diffraction peak of the MgO (200) plane shifts to a higher angle side than 2θ = 42.92 ° in the XRD measurement using the CuK alpha line, and MgO And MgAl 2 O 4 . It is preferable that the diffraction peak of the MgO (200) plane has a shoulder on the high angle side. Further, it is preferable that the mass ratio of MgO and Al 2 O 3 (MgO / Al 2 O 3 ) is larger than 2.33 when Mg and Al are converted into oxides. |
| priorityDate |
2014-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |