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filingDate 2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20160146564-A
titleOfInvention Plasma etching device with doped quartz surfaces
abstract An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. The edge ring is on the substrate support and the edge ring comprises nitrogen doped quartz with a dopant of AlO and YO or a dopant of LaO. A gas inlet for providing gas into the processing chamber is above the surface of the substrate. At least one electrode provides RF power into the processing chamber.
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type http://data.epo.org/linked-data/def/patent/Publication

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