| abstract |
The present invention relates to a tin oxide thin film having a single crystal structure and transparency and high electrical conductivity characteristics through control of stoichiometry of anions and a method for producing the same, and a method for manufacturing the tin oxide single crystal thin film according to the present invention, , The SnO z N 1 -z (0.35 < z < 0.45) thin film is deposited on the substrate. During the sputtering process, the reaction chamber is maintained at a vacuum, and the target material is a Sn target or a SnO 2 target And the plasma reaction gas is any one of N 2 and NH 3 or a mixture thereof. |