| abstract |
The present invention relates to a method for manufacturing a metal oxide-based transparent electrode, and more particularly to a method for manufacturing an IGZO transparent electrode. The present invention comprises a first step of surface-treating a plastic substrate; A second step of forming an undercoat layer on the plastic substrate; And a third step of forming an IGZO thin film on the undercoat layer, wherein the second step is to form an undercoat layer with a thickness of 75 nm to 95 nm, and the third step is to sputter the IGZO thin film on the undercoat layer. Formed by, but provides a method for manufacturing an IGZO transparent electrode to form an IGZO thin film with a power of 135W ~ 155W DC power of the sputtering device. According to the present invention, an undercoating layer is formed between the plastic substrate and the IGZO thin film, and the thickness of the undercoating layer and the sputtering process conditions are optimized, and thus, an IGZO transparent electrode having high light transmittance with excellent electrical properties can be manufactured. have. |