| abstract |
A multi-layer structure comprising a semiconductor layer, the semiconductor layer comprising a dopant and having increased conductivity; Selectively increasing the porosity of the semiconductor layer using electrochemical processing and at least partially utilizing the increased conductivity of the semiconductor layer to selectively increase the porosity; At least in part, removing the semiconductor layer having the selectively increased porosity from the multi-layer structure. By way of example, selectively increasing the porosity may include, at least in part, selectively anodizing the semiconductor layer of the multi-layer structure. |