| abstract |
One or more precursor gases, e.g., one or more silicon-containing gases, which may be one or more organosilicon and / or tetraalkylorthosilicate gases, are introduced into the processing chamber and exposed to radicals. The dielectric films deposited using the techniques described herein may contain silicon. The deposited films may exhibit low defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. In some embodiments, the deposited film may be a hydrogen member. The deposition conditions can be very mild, thus minimizing or eliminating damage to the films during the substrate and deposition from UV radiation and ion bombardment. |