| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70191c98719c658f3f5203fad1731395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d610873487d2bc9668c04d7c2ec8e6c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3321 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B21-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2014-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c095d952dd535e7f216f55c0a79c23b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a7c7c3dd0e280a9f4adb24721cb7c27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c4d8485b94d9ded842e32c70f427c22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdee47a97b0f18a76ebb8132f8222cdc |
| publicationDate |
2016-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160091326-A |
| titleOfInvention |
Silicon nitride film, production method therefor, and production device therefor |
| abstract |
It is possible to reduce the ratio of carbon atoms and / or hydrogen atoms to silicon atoms and nitrogen atoms in the silicon nitride film formed by the plasma CVD method using organosilane as a raw material and to improve the quality of films such as electrical characteristics It provides a possible way. One silicon nitride film of the present invention is formed by plasma CVD and by plasma-forming at least one additive gas selected from the group of hydrogen and ammonia together with the organosilane. The carbon atom content ratio when the sum of the silicon atom content and the nitrogen atom content in the silicon nitride film is 1 is less than 0.8. When the sum of the silicon atom content and the nitrogen atom content in the silicon nitride film is 1, the hydrogen atom content ratio is less than 0.9. According to the silicon nitride film, the characteristics such as the reduction of the leakage current are improved, so that the reliability of various devices including the silicon nitride film can be improved. |
| priorityDate |
2013-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |