http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160089119-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2015-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfda1193c674935f37ceda82128cfb7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d8aad499dddd40dc6175cdac0eef98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9a311e50c0e25e6a20481a0e215a21e |
| publicationDate | 2016-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160089119-A |
| titleOfInvention | Uv light emitting device and lighting system |
| abstract | Embodiments relate to an ultraviolet light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system. The ultraviolet light emitting device according to the embodiment includes a second conductivity type semiconductor layer 116: an active layer 114 on the second conductivity type semiconductor layer 116; A first conductive AlGaN-based semiconductor layer 113 on the active layer 114; And a first AlGaN-based light extracting pattern (P1) having a horizontal width reduced on the first conductive AlGaN-based semiconductor layer (113). |
| priorityDate | 2015-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.