| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2014-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0680cbd6529ed20f88e1984ec07accca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52798d1405eb9fd30378c34b597661a6 |
| publicationDate |
2016-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160044004-A |
| titleOfInvention |
Tungsten deposition with tungsten hexafluoride(wf6) etchback |
| abstract |
The implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method includes the steps of placing a substrate in which a feature is formed in a substrate processing chamber, introducing a continuous flow of a tungsten halide compound and a hydrogen containing gas into the processing chamber to deposit a first tungsten film over the feature, Layer of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of activated processing gas and a tungsten halide compound, Depositing a second film of a bulk tungsten layer by introducing a continuous flow of a tungsten halide compound and a hydrogen containing gas into the processing chamber to deposit a second tungsten film over the first tungsten film do. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11756803-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220025181-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11177128-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705337-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11610773-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749555-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462417-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11694912-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11527421-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200000477-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11469113-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11361978-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021194768-A1 |
| priorityDate |
2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |