http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130006314-A

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filingDate 2012-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19d7f1df693848404486f4a93d140700
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publicationDate 2013-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130006314-A
titleOfInvention Tungsten Film Formation Method
abstract The present invention provides a method for forming a tungsten film that can eliminate voids and seams in a buried portion without complicated steps. A process of forming a tungsten film by CVD on a substrate having holes to form a buried portion of tungsten in a hole, and supplying ClF 3 gas or F 2 gas as an etching gas in the same processing container and etching the upper portion of the buried portion And a step of forming a tungsten film by CVD in the same processing container with respect to the substrate having the buried portion in which the opening is formed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200034611-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160044004-A
priorityDate 2011-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.