http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160024106-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2014-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9a311e50c0e25e6a20481a0e215a21e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d8aad499dddd40dc6175cdac0eef98 |
| publicationDate | 2016-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160024106-A |
| titleOfInvention | Light emitting device and lighting system |
| abstract | Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system. The light emitting device according to the embodiment includes a first conductive semiconductor layer 112; An active layer (114) disposed on the first conductive semiconductor layer (112) including a quantum well and a quantum wall; And a second conductive semiconductor layer 116 on the active layer 114. The active layer 114 may include an In x Ga 1 -xN well layer 114W (where 0 <x <1) and an In x Ga 1 -xN well layer in y Ga 1-y N / GaN superlattice well layers (114WS) on (114W) (stage, 0 <y≤1); it can include. |
| priorityDate | 2014-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.