Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
filingDate |
2011-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13836751f81449b1dd224f7375a1d794 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b37089596d83d24715cea606d8baed1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cab9929baefccfa53e6ef2e3821767f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de6a99a014508b38d65e27048df04355 |
publicationDate |
2013-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20130020863-A |
titleOfInvention |
Light emitting element |
abstract |
The light emitting device according to the embodiment includes a first semiconductor layer; A first active layer disposed on the first semiconductor layer and including the first well layer; A second active layer disposed on the first well layer and including a second well layer that is thinner than the first well layer; A carrier injection layer disposed on the second well layer and having a superlattice structure in which the first layer and the second layer are stacked in a plurality of cycles; And a second semiconductor layer disposed on the carrier injection layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160024106-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170027450-A |
priorityDate |
2011-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |