| abstract |
A method of fabricating a semiconductor device includes forming a channel film on a substrate, forming a sacrificial film on the channel film, forming a hard mask pattern on the sacrificial film, and using the hard mask pattern as an etch mask Etching the sacrificial layer and the channel layer exposed to the hard mask pattern to form a channel portion in which the sacrificial layer is removed to reveal a top surface, wherein the channel layer is formed of Si 1 -y Ge y (0? Y <1) film, and the sacrificial film is greater than the Si 1-z Ge z (0≤z <1) provided that the sacrificial film is the germanium content (Ge z) is the channel layer the germanium content (Ge y). |