http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160022607-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2014-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b37089596d83d24715cea606d8baed1a |
| publicationDate | 2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20160022607-A |
| titleOfInvention | Light emitting device and lighting system |
| abstract | Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system. A light emitting device according to an embodiment includes a first conductive semiconductor layer; A first active layer having a first quantum wall having a first band gap energy on the first conductive type semiconductor layer; A second active layer having a second quantum wall having a second band gap energy smaller than the first band gap energy on the first active layer; And a second conductive semiconductor layer on the second active layer. |
| priorityDate | 2014-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.