| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate |
2010-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88974d697e7099d11f91714f81288377
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ee2c19be9b3a487edc2fb07780ba0fe |
| publicationDate |
2012-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120042340-A |
| titleOfInvention |
Light emitting element |
| abstract |
The embodiment includes a substrate and a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are stacked on the substrate, wherein the active layer is alternately stacked two or more times with a well layer and a barrier layer. The energy band gap of the barrier layer between at least two or more well layers sequentially adjacent to the second conductivity type semiconductor layer is smaller than the energy band gap of the remaining barrier layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160022607-A |
| priorityDate |
2010-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |