| abstract |
Embodiments of the present disclosure are directed to metal-doped amorphous carbon hardmasks for etching underlying layers, layer stacks, or structures. In one embodiment, a method of processing a substrate in a processing chamber comprises exposing the substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, forming a metal-doped carbon layer on the surface of the substrate , Reacting the metal-containing precursor with the carbon-containing precursor in the processing chamber, forming a defined pattern of through openings in the metal-doped carbon layer, and forming the metal- And transferring the defined pattern to the underlying layer below the metal-doped carbon layer. The etch hardmask using the metal-doped amorphous carbon film of the present invention provides reduced compressive stress, high hardness, and therefore, a higher etch selectivity. |