| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94879ef4d212a86d39c2a2c1e747f063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_548ecd265f2c8fb64247bec29de2f574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c33549cefbfcfbb29d22718e03f00e62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c24cafa304baf818473b71f1490aec32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e36c0bb049be2b5f3146ba9beb908a8c |
| publicationDate |
2016-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20160003226-A |
| titleOfInvention |
Low temperature flowable curing for stress accommodation |
| abstract |
Methods of forming gap fill silicon-containing layers are described. The methods may include providing or forming a silicon-and-hydrogen-containing layer on the patterned substrate. The methods can be used to non-thermally treat silicon-and-hydrogen-containing layers at low substrate temperatures to increase the concentration of Si-Si bonds while maintaining the silicon- and -hydrogen- . The flaccid layer can adapt to the desorption of hydrogen from the film and retain a high density without generating stress. Thereafter, by inserting O between the Si-Si bonds to expand the film in the trenches, and converting the silicon- and -hydrogen-containing layer to the silicon- and-oxygen-containing layer, Improvement. |
| priorityDate |
2013-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |