| abstract |
The semiconductor device includes a substrate, a first source / drain (S / D), a second S / D, and a semiconductor sheet unit. The substrate extends in a substantially horizontal direction. A first S / D is formed on the substrate. The second S / D is disposed on the first S / D. The semiconductor sheet unit extends in a substantially vertical direction and interconnects the second S / D and the first S / D. A method of manufacturing a semiconductor device is also disclosed. Further, the semiconductor device includes a substrate, a first source / drain (S / D) region, a second S / D region, and a semiconductor sheet. The first S / D region is disposed on the substrate. The second S / D region is disposed over the first S / D region. The semiconductor sheet interconnects the first and second S / D regions and comprises a plurality of turns. Also disclosed is a method of manufacturing a semiconductor device. |