http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150140972-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2014-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfda1193c674935f37ceda82128cfb7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b37089596d83d24715cea606d8baed1a |
| publicationDate | 2015-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150140972-A |
| titleOfInvention | Light emitting device |
| abstract | A light emitting device according to an embodiment of the present invention includes: a first conductive semiconductor layer; a semiconductor layer having a plurality of pits on the first conductive semiconductor layer; An active layer on which the pit is extended on the semiconductor layer; A defect suppressing layer disposed on the active layer and filling the pits; A capping layer disposed over the defect inhibiting layer; And a second conductive semiconductor layer disposed on the capping layer, wherein the defect suppressing layer includes an energy band gap wider than an energy band gap of the capping layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971649-B2 |
| priorityDate | 2014-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.