| abstract |
A group III nitride semiconductor light-emitting device capable of reducing drive voltage is provided. A semiconductor surface 19 provided with an active layer 17 includes a first surface 19a equal to a (0001) plane, and a second surface 19b composed of a facet surface inclined with respect to the first surface 19a. Have The InGaN well layer 21 includes a first portion 21a located on the facet surface 19b and a second portion 21b located on the first surface 19a. Similarly, the InGaN barrier layer 23 includes a first portion 23a located on the facet surface 19b and a second portion 23b located on the first surface 19a. In the InGaN well layer 21, the thickness d 21b of the second portion 21b is smaller than the thickness d 21a of the first portion 21a, and the InGaN well layer is grown by growing the active layer 17 on the semiconductor surface 19 having the facet surface. 21 is partially thinned. The facet surface at the semiconductor surface 19 is provided by V pits. [Selection] Figure 1 |