| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c720e9faa8b9122dc785f2656ef9873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d3ec91ae4d4d9c2b88c523e7f8cceaa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db52f17f8427078ed6a0ee7b374476c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8081dfcdbb6731a96e8fc86e34a6de91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9711a30c5d169092e5087cb7597e1685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44a51c6696866cb9ec86ff32821f2d82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49351bea75416545ba012ce15edc3e1f |
| publicationDate |
2015-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20150101875-A |
| titleOfInvention |
Method of forming fine pattern using block copolymers |
| abstract |
According to an aspect of the present invention, there is provided a method of forming a fine pattern, comprising: forming a phase separation guide layer on a substrate; forming a neutral layer on the phase separation guide layer; Forming a first pattern in which a plurality of first openings are formed; changing a first pattern to form a second pattern having a plurality of second openings each having a width narrower than the width of each of the plurality of first openings; Etching the exposed portion of the neutral layer using the second pattern as an etch mask to form a neutral pattern having a plurality of guide patterns exposing a portion of the phase separation guide layer; Removing the second pattern to expose the first patterned guide layer and the second patterned layer; And forming a fine pattern layer including a first block and a second block on the phase separation guide layer and the neutral pattern, which are phase separation results of the block copolymer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200079127-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200020228-A |
| priorityDate |
2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |