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publicationDate 2015-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150098309-A
titleOfInvention Methods of manufacturing semiconductor devices
abstract In a method of manufacturing a semiconductor device, a substrate is loaded into a deposition chamber. A precursor flow is supplied on the substrate to form a precursor precursor film. A precursor flow and a first oxidant flow are supplied on the precursor precursor film to alternately and repeatedly form the precursor layer and the first oxidant layer. A second oxidant flow is supplied on the precursor layer or the first oxidant layer to form a second oxidant layer. The preliminary precursor film can be formed in advance to prevent the object from being damaged.
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