Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H2242-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32541 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate |
2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5fd4348cdc0660cbbcb29f948bd638d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebdfbf7429253fcf1ed46261652387c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87a944b33a98c9ae2deb0430e3bf2a8b |
publicationDate |
2015-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20150082196-A |
titleOfInvention |
Plasma processing method |
abstract |
A capacitively coupled plasma processing apparatus for distributing and supplying high frequency power to an inner upper electrode and an outer upper electrode arranged opposite to a lower electrode for arranging a substrate, comprising: a variable capacitor As the adjustment knob for controlling the in-plane profile of the plasma density distribution characteristic or the process characteristic of the plasma. In this plasma processing apparatus, the varicocycle step selection range of the variable capacitor used for adjusting the outside / inside power division ratio is set to be the resonance region (RE S ) while avoiding the low resonance region (LE S ) and the high region Resonance region HE S , thereby improving the effect of the adjustment knob for controlling the in-plane profile of the plasma density distribution and process characteristics in the radial direction. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10867775-B2 |
priorityDate |
2012-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |