http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150082196-A

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filingDate 2013-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5fd4348cdc0660cbbcb29f948bd638d
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publicationDate 2015-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150082196-A
titleOfInvention Plasma processing method
abstract A capacitively coupled plasma processing apparatus for distributing and supplying high frequency power to an inner upper electrode and an outer upper electrode arranged opposite to a lower electrode for arranging a substrate, comprising: a variable capacitor As the adjustment knob for controlling the in-plane profile of the plasma density distribution characteristic or the process characteristic of the plasma. In this plasma processing apparatus, the varicocycle step selection range of the variable capacitor used for adjusting the outside / inside power division ratio is set to be the resonance region (RE S ) while avoiding the low resonance region (LE S ) and the high region Resonance region HE S , thereby improving the effect of the adjustment knob for controlling the in-plane profile of the plasma density distribution and process characteristics in the radial direction.
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