abstract |
A topcoat composition is provided which can be used in immersion lithography to form a photoresist pattern. The topcoat composition comprises: 1) a first organic solvent represented by the following formula (I); And 2) a second organic solvent selected from C4 to C10 monohydric alcohols: In this formula, R 1 and R 2 are alkyl groups having 3 to 8 carbon atoms, and the total carbon number of R 1 and R 2 exceeds 6. |