| abstract |
The microelectronic unit 400 may include a front side, a microelectronic semiconductor device adjacent the front side, a contact 403 on the front side, and a semiconductor device 401 having a back side spaced from the front side. The semiconductor element 401 may include a through hole 410 extending from the back surface through the semiconductor element 401 and the contact 403. [ The dielectric layer 411 may form a boundary with the through hole 410. The conductive layer 412 may overlap the dielectric layer 411 in the through hole 410. The conductive layer 412 may conductively interconnect the contacts 403 with the unit contacts. |