http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150043304-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-3947 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-102 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0064 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B1-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B15-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150043304-A |
| titleOfInvention | Cleaning method and cleaning system for semiconductor substrates |
| abstract | [PROBLEMS] It is possible to efficiently clean the semiconductor substrate (100) subjected to at least partial exposure of the TiN and subjected to the silicidation treatment without damaging the TiN or the silicide layer. [MEANS FOR SOLVING PROBLEMS] When a semiconductor substrate on which TiN is at least partially exposed and subjected to a silicidation treatment is cleaned, a cleaning sulfuric acid solution is circulated through the electrolytic section (2) while circulating the electrolytic section (2) A persulfate producing step of producing persulfate, a sulfuric acid solution containing persulfate obtained in the persulfate producing step and a halide solution containing at least one halide ion are mixed in the electrolytic section 2 without passing through, A solution mixing step of producing a mixed solution having an oxidizing agent concentration of 0.001 to 2 mol / L after the mixing, the heating step of heating the mixed solution, and the heating mixed solution being transferred to contact the semiconductor substrate 100 And a cleaning process for cleaning the substrate. |
| priorityDate | 2012-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.