| abstract |
A semiconductor device manufacturing method capable of effectively etching a Pt residue, a Pt contaminant, or a Pt film and suppressing the progress of corrosion of a metal member of an etching apparatus. A step (a) of forming a noble metal film or a metal film containing a noble metal on a semiconductor substrate 1 containing silicon or a conductive film 4 containing silicon formed on the semiconductor substrate 1, and a step (a) Thereafter, a heat treatment is performed on the semiconductor substrate 1 to form a silicide film 7 containing a noble metal on the semiconductor substrate 1 or the conductive film 4, and after the step (b), the first chemical solution is added. The step (c) of activating the unreacted noble metal using the step (c) and the step (d) of dissolving the unreacted noble metal activated in the step (c) using the second chemical solution are performed. Step (d) is performed within 30 minutes from step (c). [Selection] Figure 1 |