| abstract |
Described herein are methods of forming precursors and silicon-containing films. In one aspect, provided herein are precursors of formula (I) (I) In this formula, R 1 is a linear or branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing group , C 6 to C 10 aryl groups; R 2 is hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 6 alkenyl group, a linear or branched C 3 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C A C 6 to C 10 aryl group, a linear or branched C 1 to C 6 fluorinated alkyl group, an electron withdrawing group, and a C 4 to C 10 aryl group; Optionally, R 1 and R 2 are taken together to form a ring selected from substituted or unsubstituted aromatic rings or substituted or unsubstituted aliphatic rings; n = 1 or 2. |