http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150036534-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20150036534-A |
| titleOfInvention | Method of patterning a low-k dielectric film |
| abstract | Methods for patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer over the low-k dielectric layer. The low-k dielectric layer is disposed over the substrate. The method also involves transforming the exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing the deformed portions of the low-k dielectric layer with a remote plasma process, optionally with respect to the unmodified portions of the low-k dielectric layer and the mask layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190073463-A |
| priorityDate | 2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.