http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150031186-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
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filingDate 2014-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc6a30c43e66c9a6fb61d840a5f01fc5
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publicationDate 2015-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150031186-A
titleOfInvention Method for producing silicon oxide film
abstract A first gas supply unit for supplying a first gas toward the upper surface of the rotary table in the first processing zone; and a second gas supply unit for supplying a second gas toward the upper surface of the rotary table in the second processing zone, And a second gas supply unit are used for the silicon oxide film. In this method, a silicon-containing gas as a first gas is continuously supplied from a first gas supply unit, and hydrogen gas and an oxidizing gas as a second gas are continuously supplied from a second gas supply unit. Then, the first gas is adsorbed to the substrate placed on the rotary table in the first processing area while the rotary table is rotated, and the first gas adsorbed to the surface of the substrate in the second processing area and the first gas adsorbed to the surface of the substrate The second gas is reacted.
priorityDate 2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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