Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
filingDate |
2014-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0bbbb362eb948eb62a1ab5fccf80f9c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f1ba247ae0855045a6f81e40d10cde http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4f24a88f2be5e6ed2557eebc5a63d84 |
publicationDate |
2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20140118815-A |
titleOfInvention |
Silicon oxide film forming method and silicon oxide film apparatus |
abstract |
The present invention provides a silicon oxide film forming method and a silicon oxide film forming apparatus capable of preventing generation of particles. The silicon oxide film forming method includes performing a set one or more times, wherein the set includes: a standby process in which a workpiece is accommodated into and recovered from a boat; a load process in which the workpiece accommodated in the boat is loaded into a reaction chamber; a silicon oxide film formation process in which a silicon oxide film is formed on the workpiece accommodated within the reaction chamber; and an unload process in which the workpiece having the silicon oxide film is unloaded from the reaction chamber. In at least one of the unload process, the standby process, and the load process, gas containing water vapor is supplied into the reaction chamber while an interior of the reaction chamber is heated. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170007611-A |
priorityDate |
2013-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |