http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140118815-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
filingDate 2014-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0bbbb362eb948eb62a1ab5fccf80f9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f1ba247ae0855045a6f81e40d10cde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4f24a88f2be5e6ed2557eebc5a63d84
publicationDate 2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140118815-A
titleOfInvention Silicon oxide film forming method and silicon oxide film apparatus
abstract The present invention provides a silicon oxide film forming method and a silicon oxide film forming apparatus capable of preventing generation of particles. The silicon oxide film forming method includes performing a set one or more times, wherein the set includes: a standby process in which a workpiece is accommodated into and recovered from a boat; a load process in which the workpiece accommodated in the boat is loaded into a reaction chamber; a silicon oxide film formation process in which a silicon oxide film is formed on the workpiece accommodated within the reaction chamber; and an unload process in which the workpiece having the silicon oxide film is unloaded from the reaction chamber. In at least one of the unload process, the standby process, and the load process, gas containing water vapor is supplied into the reaction chamber while an interior of the reaction chamber is heated.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170007611-A
priorityDate 2013-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5416
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID410555733
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419569951
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24823
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID102295364
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559478
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098976
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327210

Total number of triples: 41.