| abstract |
An object of the present invention is to provide a ferroelectric memory device which is excellent in the provision of a poly-alpha-amino acid having good film formability, excellent in molding and processability, and excellent in operation stability even when exposed under a high temperature. A glutamic acid-γ-ester unit represented by the formula (I): (wherein R 1 represents a substituted or unsubstituted alkyl group having 1 to 8 carbon atoms, or a benzyl group which may be substituted with a halogen atom, an alkoxy group or a nitro group) Wherein R 2 is an unsubstituted alkyl group having 3 to 16 carbon atoms or a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms in which some or all of the hydrogen atoms are a halogen atom, an alicyclic hydrocarbon group having 3 to 12 carbon atoms, A cyano group, a phenyl group (some or all of the hydrogen atoms may be substituted with a halogen atom or an alkoxy group), a phenylalkoxy group (some or all of the hydrogen atoms may be substituted with a halogen atom or an alkoxy group) Represents an alkyl group having 1 to 6 carbon atoms substituted with a methine group (part or all of the hydrogen atoms may be substituted with a halogen atom or an alkoxy group). However, R 1 is N) glutamate -γ- (unit and the content ratio ((I in a unit with formula (II) in I)) / (II) include ester units, and the expression represented by the case where the same manner as ) Has a poly? -Amino acid which is a copolymer of 10/90 to 90/10 in a molar ratio. |