| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9a255559e1d94f20510a17a673b1078 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368 |
| filingDate |
2012-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7218f75f670605963812ae943a0a78f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fa377f8f10a81e62d50c1c0a19e3860
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bbc96c0002c383b29bb721fe93bedbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15760f35bab3ed4859fc796b2986f019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37fd282f81330a96c96006f5e5f408e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b9a2178ca4b997d0cc111c9a32ecc92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c7447e067070c53e45d33050fc25029 |
| publicationDate |
2014-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140097475-A |
| titleOfInvention |
Coating liquid for forming metal oxide thin film, metal oxide thin film, field-effect transistor, and method for manufacturing field-effect transistor |
| abstract |
The coating liquid for forming a metal oxide thin film of the present invention comprises an inorganic indium compound; An inorganic calcium compound or an inorganic strontium compound, or both; And organic solvents. The oxide semiconductor formed by applying the coating liquid is used for the active layer of the field effect transistor. |
| priorityDate |
2011-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |