| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fad0246171945d5e4957c9be0b37a2f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-77 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-788 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2006-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_402831c767d0d8821f6b7eca80a35a49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2775ab599871b8ad29407fe56bfc8b84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_047f180574f624afa1d494400d4e9a46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b146545c1307ea6667074bebb2b416ce |
| publicationDate |
2008-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080003889-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
It is an object of the present invention to provide a high performance and highly reliable memory device, and a technique in which a semiconductor device having the memory device can be manufactured at high cost at low cost. The semiconductor device includes an organic compound layer including an insulator on the first conductive layer and a second conductive layer on the organic compound layer including the insulator. Moreover, the semiconductor device further comprises the steps of forming a first conductive layer, discharging a composition of an insulator and an organic compound on the first conductive layer to form an organic compound layer comprising an insulator, and on the organic compound layer comprising the insulator. It is produced by the step of forming a second conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8796667-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2221829-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140097475-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9418842-B2 |
| priorityDate |
2005-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |