| abstract |
An object of the present invention is to provide a lithographic printing plate precursor which is excellent in resolution, particularly rectangular shape in pattern shape, and has good roughness with a small degree of roughness in photolithography using a high energy beam such as ArF excimer laser beam or EUV as a light source, Further, there is provided a pattern forming method using a resist material containing a sulfonium salt and a sulfonium salt used for a resist material which is difficult to elute in water in immersion lithography and a resist material thereof. [Solution] A sulfonium salt represented by the following general formula (1a). R represents a linear, branched or cyclic monovalent hydrocarbon group of 1 to 30 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom, R 0 is a hydrogen atom, or may be substituted with a heteroatom, Branched or cyclic monovalent hydrocarbon group of 1 to 30 carbon atoms which may be interposed therebetween.) |