| abstract |
An etching composition and a method of manufacturing a semiconductor device using the same are provided. The etch composition comprises 1% to 7% by weight hydrogen peroxide, 20% to 80% phosphoric acid, 0.001% to 1% amine or amide polymer, 0% to 55% sulfuric acid, and 10% % To 45% by weight of deionized water. The etch composition is used to etch the metal film. The manufacturing method of the semiconductor device includes forming a first metal film on a substrate, forming a second metal film on the first metal film, polishing the first metal film and the second metal film, And cleaning the first metal film and the second metal film using a cleaning liquid composed of the etching composition. |