http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140050627-A

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publicationDate 2014-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140050627-A
titleOfInvention Plasma etching method
abstract A plasma etching method in which a hole is formed by etching a silicon layer in a processing target substrate on which a patterned silicon oxide film is formed, with a first processing gas, wherein the silicon oxide film is formed by a second processing gas containing carbon monoxide gas. First deposition step S11 for depositing a protective film on the surface of the film, first etching step S12 for etching the silicon layer with the first processing gas, and second deposition for depositing a protective film on the sidewall of the hole by the second processing gas. Step S13 and 2nd etching step S14 which further etch a silicon layer by a 1st process gas are repeated, and 2nd deposition step S13 and 2nd etching step S14 are repeated alternately at least twice.
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