http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140049955-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2013-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03aa59354edb9700150b82f339f6eb14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c633fbac8e82f01a241d2d66facd674 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b13b15ae666bc4df8241b6a26b7c4a8d |
| publicationDate | 2014-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140049955-A |
| titleOfInvention | Film forming method and film forming apparatus |
| abstract | In a substantially cylindrical chamber set at a first temperature capable of cutting Si—H bonds, a first processing region and a second processing region spaced apart from each other are disposed along a circumferential direction, and the first processing region and the second processing region are disposed. A film forming method for forming a silicon film on a substrate loaded on a rotating table that can be rotated, and when the substrate passes through the first processing region, a Si 2 H 6 gas set to a second temperature lower than the first temperature is applied. supply, and through the molecular layer deposition step and, on the surface having a molecular layer of the SiH 3 is maintained at a first temperature on the substrate and the second treatment zone to form a molecular layer of SiH 3 on the surface of the substrate And a hydrogen releasing step that cuts the Si—H bond of the molecular layer of SiH 3 and leaves only the silicon atomic layer on the surface. |
| priorityDate | 2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.