| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2004-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b0109a8582c900157be5aa9e9e464d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b470bc44b4357392b691721bab65bd6f |
| publicationDate |
2014-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140047163-A |
| titleOfInvention |
Method of manufacturing photomask and photomask blank |
| abstract |
The present invention relates to the manufacture of a photomask 10 in which a decrease in CD precision due to a loading effect is a problem, and provides a method for suppressing the loading effect. In the manufacturing method of the photomask 10 in which the chromium pattern 21 which has the opening ratio difference of a band in the surface on the translucent board | substrate 1 on the translucent board | substrate 1 was formed, as an etching mask of the chromium film 2, An etching mask pattern 31 made of an inorganic material resistant to etching of the chromium film 2 is used. When etching the chromium film 2 with the resist pattern 41 as a mask, dry etching of the chromium film 2 under conditions selected from conditions such as damage occurring to the resist pattern 41 to an unacceptable degree Do this. |
| priorityDate |
2003-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |