| abstract |
A method is provided for etching features with an etch layer in a plasma processing chamber that includes a plurality of cycles. Each cycle includes a deposition phase and an etching phase. The deposition phase includes providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide anisotropic deposition, and depositing into the plasma processing chamber. Stopping the flow of gas. The etch phase includes providing a flow of etch gas, forming a plasma from the etch gas in the plasma processing chamber, and providing a second bias during the etch phase, the first bias being greater than the second bias. Providing a bias, and stopping the flow of etch gas into the plasma processing chamber. |