http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140035830-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2013-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c745cc5d8b5cba025d944e864981d9f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaf9a89c75f7e55fe1f74460be886d6e |
| publicationDate | 2014-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140035830-A |
| titleOfInvention | Method of manufacturing semiconductor device, substrate processing apparatus and recording medium |
| abstract | An object of the present invention is to form a thin film containing a predetermined element such as a silicon film in a low temperature region. Supplying a first raw material containing a predetermined element and a halogen group to a substrate, forming a first layer containing the predetermined element and a halogen group, and supplying a second raw material containing a predetermined element and an amino group to the substrate, And a step of performing a cycle including a step of modifying the first layer to form a second layer, and in a step of performing the cycle a predetermined number of times, the temperature of the substrate includes an amino group from a predetermined element in the second raw material. It is the temperature at which the ligand is separated, and the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, and inhibits the binding of the separated ligand with a predetermined element in the first layer. It is temperature and it is set as the temperature which the predetermined element in which the ligand in a 2nd raw material isolate | separated bonds with the predetermined element in a 1st layer. |
| priorityDate | 2012-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 101.