| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2011-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73694cf1fa6e67ed7f988a8a209f0e11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d09c3e1f6bc7fe4efe6e3415542b36f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5efa50fa64afe731f2e70c322bd86847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d818f0b9cfd6fc65d46a10b135f6ade
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e15c5959c654d9592b2eced0ddbca933 |
| publicationDate |
2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130123300-A |
| titleOfInvention |
Etch hardmask planarization to increase pattern density and aspect ratio |
| abstract |
A method for manufacturing a semiconductor device in a processing chamber is provided. In one embodiment, the method comprises depositing a first base material having a first set of interconnect features on a substrate, filling the upper portion of the first set of interconnect features with an ashable material, the first Planarizing the top surface of the first base material such that the top surface of the ashable material filled in the set of interconnect features provides a substantially planar outer surface, a second on the substantially planar outer surface Depositing a film stack comprising a base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features; Forming a second set of interconnect features, and said second set of interconnects Removing an ashable material from the first base material to connect features to the first set of interconnect features. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014221018-A1 |
| priorityDate |
2010-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |