| abstract |
A method of forming an amorphous carbon layer on a substrate of a substrate processing chamber includes introducing a hydrocarbon source into the processing chamber, introducing argon alone into the processing chamber, or in combination with helium, hydrogen, nitrogen, and combinations thereof. Generating a plasma in the processing chamber at a substantially low pressure of about 2 Torr to 10 Torr; And forming a conformal amorphous carbon layer on the substrate, wherein the argon has a volume flow rate of about 10: 1 to about 20: 1 relative to the hydrocarbon source volume flow rate. |