| abstract |
A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; Di-tert-butyl diazidosilane, bis (ethylmethyl amido) silane, bis (diisopropylamino) silane, bis (tert- butylhydrazido) diethyl silane, tris (dimethyl amido) silyl azide, tris Selecting a silicon-containing reactant from a precursor group consisting of (dimethylamido) silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis (dimethylamido) disilazane; Introducing a gaseous silicon-containing reactant into the reaction chamber under conditions that allow the silicon-containing reactant to adsorb on the substrate surface; Introducing a gaseous second reactant into the reaction chamber while the silicon-containing reactant is adsorbed onto the substrate surface, the second reactant being introduced without first sweeping the silicon-containing reactant out of the reaction chamber; And exposing the substrate surface to a plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate to form a film. |